Inchange Semiconductor 2SC3789
Silicon NPN Transistor
| Part No. | 2SC3789 |
|---|---|
| Datasheet | 2SC3789 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min)●Complement to Type 2SA1479
APPLICATIONS
●High-definition CRT display.●Color TV chroma output, high breakdown voltage drivers.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.2 A 7 W 1.5 150 ℃ -55~150 ℃ isc Website： INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3789ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Vol...