Inchange Semiconductor 2SC3834Y
Silicon NPN Transistor
| Part No. | 2SC3834Y |
|---|---|
| Datasheet | 2SC3834Y Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min)
●Good Linearity of hFE
APPLICATIONS
●Designed for use in humidifier , DC/DC converter and general purpose applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3 50 150 -55~150 A W ℃ ℃ isc Website： INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3834YELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; I...
