Datasheet Details
| Part number | 2SC3843 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3843-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3843.
| Part number | 2SC3843 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3843-INCHANGE.pdf |
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·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for silicon high speed transistor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 10 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3843 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
IB= 1.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 6A;
| Part Number | Description |
|---|---|
| 2SC3842 | NPN Transistor |
| 2SC3821 | NPN Transistor |
| 2SC3822 | NPN Transistor |
| 2SC3830 | NPN Transistor |
| 2SC3831 | NPN Transistor |
| 2SC3832 | NPN Transistor |
| 2SC3833 | NPN Transistor |
| 2SC3834 | NPN Transistor |
| 2SC3835 | NPN Transistor |
| 2SC3850 | NPN Transistor |