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2SC3853 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 50(Min)@ IC= 2A ·plement to Type 2SA1489 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3853 isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;

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