Download 2SC3853 Datasheet PDF
Inchange Semiconductor
2SC3853
2SC3853 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) - DC Current Gain- : h FE= 50(Min)@ IC= 2A - plement to Type 2SA1489 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature ℃ Tstg Storage Temperature -55~150 ℃ 2SC3853 isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS...