2SC3893 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3893 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;.
