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2SC3907S - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Good Linearity of hFE Complement to Type 2SA1516S Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audi

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1516S ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.2 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3907S isc Website：www.iscsemi.