Datasheet Details
| Part number | 2SC3907S |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 236.80 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3907S-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3907S |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 236.80 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3907S-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1516S ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.2 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3907S isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3907 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3907 | NPN Transistor |
| 2SC3902 | NPN Transistor |
| 2SC3910 | NPN Transistor |
| 2SC3927 | NPN Transistor |
| 2SC3944 | NPN Transistor |
| 2SC3944A | NPN Transistor |
| 2SC3947 | NPN Transistor |
| 2SC3962 | NPN Transistor |
| 2SC3969 | NPN Transistor |
| 2SC3970 | NPN Transistor |