2SC3944 Overview
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·plement to Type 2SA1535 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low frequency driver and high power amplification. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3944 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...
