Datasheet Details
| Part number | 2SC3944A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.33 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3944A-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3944A.
| Part number | 2SC3944A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.33 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3944A-INCHANGE.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1535A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low frequency driver and high power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 15 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3944A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3944A | Silicon NPN Transistor | Panasonic Semiconductor |
 |
2SC3944A | SILICON POWER TRANSISTOR | SavantIC |
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2SC3944 | Silicon NPN Transistor | Panasonic Semiconductor |
|
2SC3944 | SILICON POWER TRANSISTOR | SavantIC |
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