Datasheet Details
| Part number | 2SC3962 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.04 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3962-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3962.
| Part number | 2SC3962 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.04 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3962-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3962 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3962 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3969 | NPN Transistor |
| 2SC3902 | NPN Transistor |
| 2SC3907 | NPN Transistor |
| 2SC3907S | NPN Transistor |
| 2SC3910 | NPN Transistor |
| 2SC3927 | NPN Transistor |
| 2SC3944 | NPN Transistor |
| 2SC3944A | NPN Transistor |
| 2SC3947 | NPN Transistor |
| 2SC3970 | NPN Transistor |