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2SC3970 - NPN Transistor

Datasheet Summary

Description

Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high speed switching applications.

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Datasheet Details

Part number 2SC3970
Manufacturer INCHANGE
File Size 207.96 KB
Description NPN Transistor
Datasheet download datasheet 2SC3970 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.
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