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2SC3975 - NPN Transistor

Datasheet Summary

Description

Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high speed switching applications.

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Datasheet Details

Part number 2SC3975
Manufacturer INCHANGE
File Size 206.59 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
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