Inchange Semiconductor 2SC3992
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3992 |
|---|---|
| Datasheet | 2SC3992 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Switching Speed●High Breakdown Voltage- : V(BR)CBO= 1100V(Min)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3992 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3992ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEX(SUS) Collector-Emitter Sustaining Voltage IC=10mA; IB=0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; RBE = ∞ 1100 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 800 V(BR)EBO E...