Inchange Semiconductor 2SC3994
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3994 |
|---|---|
| Datasheet | 2SC3994 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Switching Speed●High Breakdown Voltage- : V(BR)CBO= 1100V(Min)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 60 A 300 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3994 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3994ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 12A; IB=2.4A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB=2.4A 1.5 V ICB...