Inchange Semiconductor 2SC4005
Silicon NPN Transistor
DESCRIPTION
●High DC current gain.●Large current capacity and wide ASO.
●On-chip Zener diode of 50±8V between collector and base.
●Large inductive load handling capability.
●Micaless package facilitating mounting.
APPLICATIONS
●Designed for use in switching of L load (motor drivers, printer hammer drivers, relay drivers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 42 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 2A ICM Collector Current-Pulse 4A IB Base Current-Continuous 0.4 A Total Power Dissipation @TC=25℃ 15 PT Total Power Dissipation @Ta=25℃ 2.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC4005ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-Emitter Voltage IC=1mA ; RBE=∞ 42 58 V VCBO Collecto...