Datasheet Details
| Part number | 2SC4024 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4024-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4024.
| Part number | 2SC4024 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4024-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC-DC converter,Emergency lighting Inverter and general purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 3 A 35 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4024 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.1A ICBO Collector Cutoff Current VCB= 100V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC4024 | Silicon NPN Transistor | Sanken electric |
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