2SC4106 datasheet by Inchange Semiconductor.
| Part number | 2SC4106 |
|---|---|
| Datasheet | 2SC4106-INCHANGE.pdf |
| File Size | 209.26 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·High Collector-Emitter Breakdown Voltage : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4106 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC4106 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
 |
2SC4106 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SC4111 | NPN Transistor |
| 2SC4116 | NPN Transistor |
| 2SC4123 | NPN Transistor |
| 2SC4124 | NPN Transistor |
| 2SC4125 | Silicon NPN Power Transistor |
