Inchange Semiconductor 2SC4106
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4106 |
|---|---|
| Datasheet | 2SC4106 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.)●High Switching Speed
●Wide Area of Safe Operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for switching regulator applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous 3 A Collector Power Dissipation@TC=25℃ 50 PC W Collector Power Dissipation@Ta=25℃ 1.75 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4106 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4106ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(...