Datasheet Details
| Part number | 2SC4106 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.26 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4106-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC4106 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.26 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4106-INCHANGE.pdf |
|
|
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·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous 3 A Collector Power Dissipation@TC=25℃ 50 PC W Collector Power Dissipation@Ta=25℃ 1.75 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4106 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4106 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4106 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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2SC4106 | SILICON POWER TRANSISTOR | SavantIC |
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