Datasheet Details
| Part number | 2SC4108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.77 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4108-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor 2SC4108.
| Part number | 2SC4108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.77 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4108-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 25 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 100 W 2.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4108 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
 |
2SC4108 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC4105 | NPN Transistor |
| 2SC4106 | NPN Transistor |
| 2SC4107 | NPN Transistor |
| 2SC4109 | NPN Transistor |
| 2SC4110 | NPN Transistor |
| 2SC4111 | NPN Transistor |
| 2SC4116 | NPN Transistor |
| 2SC4123 | NPN Transistor |
| 2SC4124 | NPN Transistor |
| 2SC4125 | Silicon NPN Power Transistor |