Datasheet Details
| Part number | 2SC4109 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.61 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4109-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC4109.
| Part number | 2SC4109 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.61 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4109-INCHANGE.pdf |
|
|
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous ICM Collector Current-Peak PW300s, duty cycle10% IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 16 A 32 A 6 A 140 W 2.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4109 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4109 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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2SC4109 | SILICON POWER TRANSISTOR | SavantIC |
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