Inchange Semiconductor 2SC4131
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4131 |
|---|---|
| Datasheet | 2SC4131 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min)●Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 5A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for DC-DC converter, emergency lighting inverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 15 A ICP Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4131 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;...