Datasheet Details
| Part number | 2SC4150 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4150-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SC4150.
| Part number | 2SC4150 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4150-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Collector Current-IC= 12A(Max.) ·Low Collector Saturation Voltage : VCE(sat) = 0.3V(Max.)@ IC= 6A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in drivers such as DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 24 A IB Base Current-Continuous 2 A IBM Base Current-Peak PT Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC4150 MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC4150 | Switching Power Transistor | Shindengen Electric Mfg.Co.Ltd |
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2SC4150 | SILICON POWER TRANSISTOR | SavantIC |
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