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2SC4205 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4205.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 7 A 1.5 W 40 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC4205 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;

IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;

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Similar Datasheet

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SavantIC Logo 2SC4205 SILICON POWER TRANSISTOR SavantIC

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