Inchange Semiconductor 2SC4227
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4227 |
|---|---|
| Datasheet | 2SC4227 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Noise NF = 1.4 dB TYP., @VCE = 3 V, IC = 7 mA, f = 1.0 GHz●High Gain ︱S21e︱2 = 12 dB TYP. @VCE = 3 V, IC = 7 mA, f = 1.0 GHz
●100% tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for VHF, UHF low noise amplifier.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 65 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC4227 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor 2SC4227ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 7mA ; VCE= 3V fT Current-Gain—Bandwidth Product IC= 7mA ; VCE= 3V Cre Feed-Back Capacitance ︱S21e︱2 Insertion Power Gain IE= 0 ; VCB= 3V;f= 1.0MHz IC= 7mA ; VCE= 3V;f= 1.0GHz NF Noise Figure IC= 7mA ; VCE= 3V;f= 1.0GHz MIN TYP.