Inchange Semiconductor 2SC4228
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4228 |
|---|---|
| Datasheet | 2SC4228 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High fT 8.0GHz TYP. @VCE = 3 V, IC = 5 mA, f = 2 GHz●Low Cre 0.3pF TYP., @VCB = 3 V, IE = 0, f = 1 MHz
●High ︱S21e︱2 7.5 dB TYP. @VCE = 3 V, IC = 5 mA, f = 2 GHz
●100% tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for VHF, UHF low noise amplifier.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 35 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN RF TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 5mA ; VCE= 3V fT Current-Gain—Bandwidth Product IC= 5mA ; VCE= 3V ;...
