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2SC4242 Datasheet PDF

Inchange Semiconductor 2SC4242

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC4242
Datasheet 2SC4242 Download
Manufacturer
Inchange Semiconductor
Description Silicon NPN Power Transistor
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2SC4242 datasheet page 1 preview

DESCRIPTION

●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min)
●Fast Switching Speed
●Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 4.0A
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.125 ℃/W isc Website: 1...
2SC4242 page 2 preview