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2SC4246 Datasheet PDF

Inchange Semiconductor 2SC4246

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC4246
Datasheet 2SC4246 Download
Manufacturer
Inchange Semiconductor
Description Silicon NPN RF Transistor
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2SC4246 datasheet page 1 preview

DESCRIPTION

●High Current-Gain Bandwidth Product fT= 1500MHz TYP. @VCE = 10 V, IC = 8 mA
●Low Noise
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●TV tuner , UHF oscillator applications
●TV tuner , UHF converter applications

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 25 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4246

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA V(BR)CEO Collector-Emitter Bre...
2SC4246 page 2 preview