Datasheet Details
| Part number | 2SC4261 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 164.82 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4261-INCHANGE.pdf |
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Overview: isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4261.
| Part number | 2SC4261 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 164.82 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4261-INCHANGE.pdf |
|
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·Low Noise ·High Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF local oscillator.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.1 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4261 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ;
IE= 0 ICBO Collector Cutoff Current VCB= 15V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4261 | Silicon NPN Transistor | Hitachi Semiconductor |
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