Datasheet Details
| Part number | 2SC4265 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.83 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4265-INCHANGE.pdf |
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Overview: isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4265.
| Part number | 2SC4265 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.83 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4265-INCHANGE.pdf |
|
|
|
·Low Noise ·High Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.1 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4265 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4265 | Silicon NPN Transistor | Hitachi Semiconductor |
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