2SC4288 Overview
·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification 2SC4288 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.