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2SC4332-Z Datasheet PDF

Inchange Semiconductor 2SC4332-Z

This transistor is ideal for use in Switching regulators, DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power supply devices,as well as for high-current switching. The information contained herein is presented only as a guide for the applications of our products.
Part No. 2SC4332-Z
Datasheet 2SC4332-Z Download
Manufacturer
Inchange Semiconductor
Description Silicon NPN Power Transistor
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2SC4332-Z datasheet page 1 preview

DESCRIPTION

●Low collector saturation voltage
●Fast switching speed
●High DC current gain and excellent linearity
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

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ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak NOTE1 Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ NOTE2 TJ Junction Temperature 10 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= 3A; IB= 150mA VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= 4A;...
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