Inchange Semiconductor 2SC4350
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4350 |
|---|---|
| Datasheet | 2SC4350 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)●High DC Current Gain : hFE= 2000~20000(Min) @IC= 5A
●Fast Switching Speed
●Good Linearity of hFE
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SC4350ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SU...
