Datasheet4U Logo Datasheet4U.com

2SC4350 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) High DC Current Gain : hFE= 2000~20000(Min) @IC= 5A Fast Switching Speed Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SC4350 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000~20000(Min) @IC= 5A ·Fast Switching Speed ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.