Inchange Semiconductor 2SC4368
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4368 |
|---|---|
| Datasheet | 2SC4368 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage : VCEO= 150V(Min)●Complement to Type 2SA1657
●Good Linearity of hFE
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for TV, monitor vertical output applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25℃ TJ Junction Temperature Tstg Storage Temperature 0.5 A 20 W 2 150 ℃ -55~150 ℃ isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4368ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA...