Datasheet Details
| Part number | 2SC4419 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.25 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4419-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor 2SC4419.
| Part number | 2SC4419 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.25 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4419-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4419 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC4418 | NPN Transistor |
| 2SC4421 | Silicon NPN Power Transistor |
| 2SC4423 | NPN Transistor |
| 2SC4424 | NPN Transistor |
| 2SC4425 | NPN Transistor |
| 2SC4426 | NPN Transistor |
| 2SC4427 | NPN Transistor |
| 2SC4428 | NPN Transistor |
| 2SC4429 | NPN Transistor |
| 2SC4434 | NPN Transistor |