Datasheet Details
| Part number | 2SC4425 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.88 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4425-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4425.
| Part number | 2SC4425 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.88 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4425-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range 8 A 65 W 3 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4425 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4425 | NPN Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SC4421 | Silicon NPN Power Transistor |
| 2SC4423 | NPN Transistor |
| 2SC4424 | NPN Transistor |
| 2SC4426 | NPN Transistor |
| 2SC4427 | NPN Transistor |
| 2SC4428 | NPN Transistor |
| 2SC4429 | NPN Transistor |
| 2SC4418 | NPN Transistor |
| 2SC4419 | NPN Transistor |
| 2SC4434 | NPN Transistor |