Inchange Semiconductor 2SC4429
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4429 |
|---|---|
| Datasheet | 2SC4429 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : V(BR)CEO= 800V(Min)●Fast Switching speed
●Wide Area of Safe Operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for switching regulatorAPPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Pulse 25 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 60 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4429 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4429ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE=0 V(BR)EBO Emitter-Base B...