Datasheet Details
| Part number | 2SC4429 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.19 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4429-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC4429 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.19 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4429-INCHANGE.pdf |
|
|
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·High Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Pulse 25 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 60 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4429 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4429 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=5mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=1mA;
IE=0 V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4429 | NPN Transistor | Sanyo Semicon Device |
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2SC4429 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC4421 | Silicon NPN Power Transistor |
| 2SC4423 | NPN Transistor |
| 2SC4424 | NPN Transistor |
| 2SC4425 | NPN Transistor |
| 2SC4426 | NPN Transistor |
| 2SC4427 | NPN Transistor |
| 2SC4428 | NPN Transistor |
| 2SC4418 | NPN Transistor |
| 2SC4419 | NPN Transistor |
| 2SC4434 | NPN Transistor |