Datasheet Details
| Part number | 2SC4559 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.67 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4559-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4559.
| Part number | 2SC4559 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.67 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4559-INCHANGE.pdf |
|
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· ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SC4559 CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC4559 | NPN Transistor | Panasonic Semiconductor |
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2SC4559 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC4550 | NPN Transistor |
| 2SC4552 | NPN Transistor |
| 2SC4557 | NPN Transistor |
| 2SC4507 | NPN Transistor |
| 2SC4508 | NPN Transistor |
| 2SC4509 | NPN Transistor |
| 2SC4510 | NPN Transistor |
| 2SC4511 | NPN Transistor |
| 2SC4512 | NPN Transistor |
| 2SC4517 | NPN Transistor |