Inchange Semiconductor 2SC4570
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4570 |
|---|---|
| Datasheet | 2SC4570 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Current-Gain—Bandwidth Product fT= 5.5 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz●Low COB 0.7pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in UHF oscillator and mixer.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30 mA 0.12 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4570ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 15V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5mA ; IB= 0.5mA hFE D...