Datasheet Details
| Part number | 2SC4573 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.42 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4573-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4573.
| Part number | 2SC4573 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.42 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4573-INCHANGE.pdf |
|
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·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 4 A ICM Collector Current-Pulse 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4573 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;
IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A;
| Part Number | Description |
|---|---|
| 2SC4574 | TO-220F NPN Transistor |
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| 2SC4508 | NPN Transistor |
| 2SC4509 | NPN Transistor |
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| 2SC4511 | NPN Transistor |
| 2SC4512 | NPN Transistor |
| 2SC4517 | NPN Transistor |
| 2SC4518 | NPN Transistor |
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