Inchange Semiconductor 2SC4574
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4574 |
|---|---|
| Datasheet | 2SC4574 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | TO-220Fa Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage●High DC Current Gain
●High Reliability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●General purpose power amplifiers●Including zener diode
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO(SUS) Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.5 ℃/W 2SC4574 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA, IB= 0 VCE(sat) Collector-Emit...