2SC4589 Overview
·High Breakdown Voltage- : RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;.
2SC4589 datasheet by Inchange Semiconductor.
| Part number | 2SC4589 |
|---|---|
| Datasheet | 2SC4589-INCHANGE.pdf |
| File Size | 185.15 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·High Breakdown Voltage- : RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SC4589 | Silicon NPN Transistor | Hitachi Semiconductor | |
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2SC4589 | SILICON POWER TRANSISTOR | SavantIC |
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