Datasheet Details
| Part number | 2SC4589 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.15 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4589-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4589.
| Part number | 2SC4589 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.15 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4589-INCHANGE.pdf |
|
|
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for CTV/character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4589 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4589 | Silicon NPN Transistor | Hitachi Semiconductor |
 |
2SC4589 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC4580 | NPN Transistor |
| 2SC4581 | NPN Transistor |
| 2SC4582 | NPN Transistor |
| 2SC4583 | NPN Transistor |
| 2SC4585 | NPN Transistor |
| 2SC4507 | NPN Transistor |
| 2SC4508 | NPN Transistor |
| 2SC4509 | NPN Transistor |
| 2SC4510 | NPN Transistor |
| 2SC4511 | NPN Transistor |