2SC4589 Description
·High Breakdown Voltage- : RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;.
2SC4589 is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| 2SC4589 | Silicon NPN Transistor | |
SavantIC |
2SC4589 | SILICON POWER TRANSISTOR |
·High Breakdown Voltage- : RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;.