Datasheet Details
| Part number | 2SC4595 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4595-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4595.
| Part number | 2SC4595 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4595-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 2V, IC= 2A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 6A, IB= 0.3A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 12 A 30 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4595 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4595 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC4591 | NPN Transistor |
| 2SC4596 | NPN Transistor |
| 2SC4507 | NPN Transistor |
| 2SC4508 | NPN Transistor |
| 2SC4509 | NPN Transistor |
| 2SC4510 | NPN Transistor |
| 2SC4511 | NPN Transistor |
| 2SC4512 | NPN Transistor |
| 2SC4517 | NPN Transistor |
| 2SC4518 | NPN Transistor |