Datasheet Details
| Part number | 2SC4706 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.94 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4706-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC4706 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.94 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4706-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 14 A ICM Collector Current-Peak 28 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4706 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC4706 | NPN TRANSISTOR | Sanken electric |
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2SC4706 | SILICON POWER TRANSISTOR | SavantIC |
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