High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 600V(Min)
High Switching Speed
High Reliability
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 600V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
14
A
ICM
Collector Current-Peak
28
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
7
A
130
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC4706
isc website：www.iscsemi.
2SC4706 Datasheet
