Inchange Semiconductor 2SC4742
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4742 |
|---|---|
| Datasheet | 2SC4742 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : VCES= 1500V (Min)●Built-in Damper Diode
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for character display horizontal deflection output stage applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 6 A IC(peak) Collector Current-Peak 7 A IC(surge) Collector Current-Surge 16 A ID C-E Diode Forward Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4742ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VB...