Datasheet Details
| Part number | 2SC4744 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.28 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4744-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4744.
| Part number | 2SC4744 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.28 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4744-INCHANGE.pdf |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC(peak) Collector Current-Peak 7 A IC(surge) Collector Current-Surge 16 A ID C-E Diode Forward Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4744 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA ;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4744 | Silicon NPN Transistor | Hitachi Semiconductor |
| Part Number | Description |
|---|---|
| 2SC4743 | NPN Transistor |
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| 2SC4706 | NPN Transistor |
| 2SC4761 | NPN Transistor |
| 2SC4762 | NPN Transistor |
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