2SC4747 Overview
·High Breakdown Voltage- : RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;.
| Part number | 2SC4747 |
|---|---|
| Datasheet | 2SC4747-INCHANGE.pdf |
| File Size | 184.37 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·High Breakdown Voltage- : RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SC4747 | NPN TRANSISTOR | Hitachi Semiconductor | |
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2SC4747 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
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|---|---|
| 2SC4743 | NPN Transistor |
| 2SC4744 | NPN Transistor |
| 2SC4745 | NPN Transistor |
| 2SC4746 | NPN Transistor |
| 2SC4703 | NPN Transistor |
| 2SC4706 | NPN Transistor |
| 2SC4761 | NPN Transistor |
| 2SC4762 | NPN Transistor |
| 2SC4763 | NPN Transistor |
| 2SC4764 | NPN Transistor |