Datasheet4U Logo Datasheet4U.com

2SC4747 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MA

📥 Download Datasheet

Datasheet preview – 2SC4747

Datasheet Details

Part number 2SC4747
Manufacturer INCHANGE
File Size 184.37 KB
Description NPN Transistor
Datasheet download datasheet 2SC4747 Datasheet
Additional preview pages of the 2SC4747 datasheet.

📁 Similar Datasheet

  • 2SC4747 - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SC4747 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC4742 - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SC4742 - Silicon NPN Power Transistors (Inchange Semiconductor)
  • 2SC4744 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SC4702 - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SC4702 - NPN Transistor (Renesas)
  • 2SC4702 - NPN Transistor (Kexin)
  • 2SC4703 - NPN TRANSISTOR (NEC)
  • 2SC4703 - NPN SILICON RF TRANSISTOR (CEL)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4747 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 6 V IC Collector Current- Continuous 10 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
Published: |