2SC4747 Description
·High Breakdown Voltage- : RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;.
- Part: 2SC4747
- Manufacturer: Inchange Semiconductor
- Size: 184.37 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Hitachi Semiconductor |
2SC4747 | NPN TRANSISTOR |
SavantIC |
2SC4747 | SILICON POWER TRANSISTOR |