Datasheet4U Logo Datasheet4U.com

2SC4793 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SA1837 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.

·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC4793 isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;

2SC4793 Distributor & Price

Compare 2SC4793 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.