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2SC4793 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) High Current-Gain Bandwidth Product Complement to Type 2SA1837 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Driver stage amplifier

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SA1837 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC4793 isc website： www.iscsemi.