Inchange Semiconductor 2SC4849
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4849 |
|---|---|
| Datasheet | 2SC4849 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min)
●High Switching Speed
●Wide Area of Safe Operation
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for power amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEX(SUS) Collector-Emitter Breakdown Voltage ICP= 8A; IB1= -IB2= 0.5A, IC= 5A; L= 200μH, clamped VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2SC4849 MIN TYP.