Datasheet Details
| Part number | 2SC4850 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.95 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4850-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4850.
| Part number | 2SC4850 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.95 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4850-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4850 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Part Number | Description |
|---|---|
| 2SC4830 | NPN Transistor |
| 2SC4833 | NPN Transistor |
| 2SC4834 | NPN Transistor |
| 2SC4847 | NPN Transistor |
| 2SC4848 | NPN Transistor |
| 2SC4849 | NPN Transistor |
| 2SC4878 | NPN Transistor |
| 2SC4880 | NPN Transistor |
| 2SC4881 | NPN Transistor |
| 2SC4883 | NPN Transistor |