Datasheet Details
| Part number | 2SC4878 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.26 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4878-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4878.
| Part number | 2SC4878 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.26 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4878-INCHANGE.pdf |
|
|
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·High Breakdown Voltage ·High Switching Speed ·Built in damper diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 5.0 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4878 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4878 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC4830 | NPN Transistor |
| 2SC4833 | NPN Transistor |
| 2SC4834 | NPN Transistor |
| 2SC4847 | NPN Transistor |
| 2SC4848 | NPN Transistor |
| 2SC4849 | NPN Transistor |
| 2SC4850 | NPN Transistor |
| 2SC4880 | NPN Transistor |
| 2SC4881 | NPN Transistor |
| 2SC4883 | NPN Transistor |