Inchange Semiconductor 2SC4881
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4881 |
|---|---|
| Datasheet | 2SC4881 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min)●High Switching Speed
●Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IB= 125mA)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high current switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse 8 A IB Base Current-Continuous 1 A Total Power Dissipation @TC=25℃ 20 PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ isc Website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC4881 MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Break...