Datasheet Details
| Part number | 2SC4881 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.90 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4881-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4881.
| Part number | 2SC4881 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.90 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4881-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IB= 125mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse 8 A IB Base Current-Continuous 1 A Total Power Dissipation @TC=25℃ 20 PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC4881 MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4881 | NPN TRANSISTOR | Toshiba Semiconductor |
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2SC4881 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC4880 | NPN Transistor |
| 2SC4883 | NPN Transistor |
| 2SC4883A | NPN Transistor |
| 2SC4886 | NPN Transistor |
| 2SC4830 | NPN Transistor |
| 2SC4833 | NPN Transistor |
| 2SC4834 | NPN Transistor |
| 2SC4847 | NPN Transistor |
| 2SC4848 | NPN Transistor |
| 2SC4849 | NPN Transistor |