Inchange Semiconductor 2SC4901
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4901 |
|---|---|
| Datasheet | 2SC4901 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
● High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V，IC=20mA，f=0.9GHz● High gain, low noise figure ︱S21e︱2 = 13.5 dB @ VCE=5V，IC=20mA，f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V，IC=5mA， f=0.9GHz
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●UHF / VHF wide band amplifierABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 9 V VEBO Emitter-Base voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 mA 100 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC4901 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN RF TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER VCBO Collector-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain COB Output Capacitance fT Current-Gain—Bandwidth Product | S21e |2...